K4B4G1646D-BYMA
产品概述
图片仅供参考
| 制造商IC编号 | K4B4G1646D-BYMA |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 256MX16 DDR3L |
| 共通IC编号 | K4B4G1646D-BYMA000 |
| K4B4G1646D-BYMA0000 | |
| K4B4G1646D-BYMA0CV | |
| K4B4G1646D-BYMAT | |
| K4B4G1646D-BYMATCV |
产品详情
| 脚位/封装 | FBGA-96 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 5th Generation |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B4G1646D-BYMA | 8,960 | 2025+ | 索取报价 |
| K4B4G1646D-BYMA | 11,200 | 2023+ | 索取报价 |
| K4B4G1646D-BYMA | 53,760 | DC2340+ | 索取报价 |
| K4B4G1646D-BYMA | 10,000 | 22+ | 索取报价 |
| K4B4G1646D-BYMA | 10,000 | 索取报价 | |
| K4B4G1646D-BYMA | 0 | 索取报价 | |
| K4B4G1646D-BYMA | 100,000 | 2023+ | 索取报价 |
| K4B4G1646D-BYMA000 | 50,000 | 23+ | 索取报价 |
| K4B4G1646D-BYMA | 240 | 2225＋ | 索取报价 |
| K4B4G1646D-BYMA | 1,796 | 15+ | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM6HE16EWAKG-10H | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDAS | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-PBA/RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |