圖片僅供參考
| 製造商IC編號 | K4B4G1646D-BYMA |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 256MX16 DDR3L |
| 共通IC編號 | K4B4G1646D-BYMA000 |
| K4B4G1646D-BYMA0000 | |
| K4B4G1646D-BYMA0CV | |
| K4B4G1646D-BYMAT | |
| K4B4G1646D-BYMATCV |
| 脚位/封装 | FBGA-96 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 5th Generation |
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4B4G1646D-BYMA | 8,960 | 2025+ | 索取報價 |
| K4B4G1646D-BYMA | 11,200 | 2023+ | 索取報價 |
| K4B4G1646D-BYMA | 53,760 | DC2340+ | 索取報價 |
| K4B4G1646D-BYMA | 10,000 | 22+ | 索取報價 |
| K4B4G1646D-BYMA | 10,000 | 索取報價 | |
| K4B4G1646D-BYMA | 0 | 索取報價 | |
| K4B4G1646D-BYMA | 100,000 | 2023+ | 索取報價 |
| K4B4G1646D-BYMA000 | 50,000 | 23+ | 索取報價 |
| K4B4G1646D-BYMA | 240 | 2225+ | 索取報價 |
| K4B4G1646D-BYMA | 1,796 | 15+ | 索取報價 |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EM6HE16EWAKG-10H | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDAS | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-PBA/RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |