K4B4G1646E-BYK0/BCMA
产品概述
图片仅供参考
| 制造商IC编号 | K4B4G1646E-BYK0/BCMA |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 256MX16 DDR3L |
产品详情
| 脚位/封装 | FBGA-96 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Low VDD(1.35V) |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT41K256M16TW-107:R | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107A | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-107P DDR3 256X16 | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW-108:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| MT41K256M16TW107P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |