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| 制造商IC编号 | K4G80325FB-HC25 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | GDDR5 SDRAM |
| IC代码 | 256MX32 GDDR5 |
| 共通IC编号 | K4G80325FB-HC25000 |
| K4G80325FB-HC25T00 |
| 脚位/封装 | FBGA-170 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35V/1.5V |
| 温度规格 | 0 C~+85 C |
| 速度 | 8.0 GBPS |
| 标准包装数量 | 1120 |
| 标准外箱 | |
| Bit Organization | x32 |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 3rd Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4G80325FB-HC25 | 30,000 | 18+ | 索取报价 |
| K4G80325FB-HC25 | 50,000 | 索取报价 | |
| K4G80325FB-HC25 | 4,000 | 索取报价 | |
| K4G80325FB-HC25 | 4,480 | 索取报价 | |
| K4G80325FB-HC25 | 10,000 | 索取报价 | |
| K4G80325FB-HC25 | 0 | 索取报价 | |
| K4G80325FB-HC25 | 10,000 | 18+ | 索取报价 |
| K4G80325FB-HC25 | 5,000 | 18+ | 索取报价 |
| K4G80325FB-HC25 | 10,000 | DC2020+ | 索取报价 |
| K4G80325FB-HC25 | 500 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5GQ8H24MJR-R4C | FBGA | 1.35V/1.55 | 3.5 GHZ | 0 C~+85 C |
| MT51J256M32HF-80:B | FBGA-170 | 1.5 V | 8.0 GBPS | 0 C~+85 C |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4G80325FB-HC | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC03 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC22 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC24 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC28 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC28 D5 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC28 D5 25 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC28000 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC28000(8G DDR5) | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |
| K4G80325FB-HC28T00 | FBGA-170 | 1.35V/1.5V | 8.0 GBPS | 0 C~+85 C |