图片仅供参考
| 制造商IC编号 | K4H281638E-TLB0 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR1 SDRAM |
| IC代码 | 8MX16 DDR1 |
| 脚位/封装 | TSOP2(66) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 2.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 133 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low Power |
| Generation | 6th Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4H281638A-TCA2 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638A-TCB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638A-TLA2 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638A-TLB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638B-TCA2 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638B-TCB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638B-TCB0000 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638B-TCB0000SAM | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638B-TLA2 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |
| K4H281638B-TLB0 | TSOP2(66) | 2.5 V | 133 MHZ | 0 C~+85 C |