K4H510838G-HCB3
产品概述
图片仅供参考
| 制造商IC编号 | K4H510838G-HCB3 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR1 SDRAM |
| IC代码 | 64MX8 DDR1 |
| 共通IC编号 | K4H510838G-HCB3T00 |
| K4H510838G-HCB3TCV |
产品详情
| 脚位/封装 | FBGA-60 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 2.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 8th Generation |
| Power | Normal Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4H510838G-HCB3 | 4,000 | 索取报价 | |
| K4H510838G-HCB3 | 20 | 1031 | 索取报价 |
| K4H510838G-HCB3 | 2,000 | 索取报价 | |
| K4H510838G-HCB3 | 2,000 | 2010+ | 索取报价 |
| K4H510838G-HCB3 | 20,000 | 索取报价 | |
| K4H510838G-HCB3 | 2,000 | 索取报价 | |
| K4H510838G-HCB3 | 10,000 | 索取报价 | |
| K4H510838G-HCB3 | 60,000 | 09+ | 索取报价 |
| K4H510838G-HCB3 | 1,120 | 2010+ | 索取报价 |
| K4H510838G-HCB3TCV | 30,000 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| IS43R86400D-6B | BGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400D-6BL | BGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400D-6BL-TR | BGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6BL | BGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6BL-TR | BGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6BL | BGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6BL-TR | BGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H510838B-GC/LB3 | FBGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H510838B-GCB3/K4H | FBGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H510838B-GLB3 | FBGA-60 | 2.5 V | 166 MHZ | 0 C~+85 C |