K4H511638B-TCB3
产品概述
图片仅供参考
| 制造商IC编号 | K4H511638B-TCB3 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR1 SDRAM |
| IC代码 | 32MX16 DDR1 |
| 共通IC编号 | K4H511638B-TCB300 |
| K4H511638B-TCB3000 | |
| K4H511638B-TCB3T | |
| K4H511638B-TCB3T00 | |
| K4H511638BTCB3 |
产品详情
| 脚位/封装 | TSOP2(66) |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 2.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 3rd Generation |
| Power | Normal Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4H511638BTCB3 | 5,671 | 索取报价 | |
| K4H511638BTCB3 | 66 | 0601+ | 索取报价 |
| K4H511638BTCB3 | 510 | 索取报价 | |
| K4H511638BTCB3 | 7,000 | 索取报价 | |
| K4H511638B-TCB3000 | 10,000 | 2009+ | 索取报价 |
| K4H511638BTCB3 | 1,478 | 2007+ | 索取报价 |
| K4H511638BTCB3 | 791 | 200440+ | 索取报价 |
| K4H511638BTCB3 | 1,000 | 10+ | 索取报价 |
| K4H511638B-TCB3000 | 10,000 | 索取报价 | |
| K4H511638BTCB3 | 5,868 | 2004+ | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4H511638B-TC/LB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638B-TLB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638B-UCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638B-UCB3000 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638B-UCB3T00 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638B-ULB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638BTCB3TM0 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638BTCBO | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638BUCLB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H511638C-UC/LA2 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |