K4H511638F-HIB3
产品概述
图片仅供参考
| 制造商IC编号 | K4H511638F-HIB3 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR1 SDRAM |
| IC代码 | 32MX16 DDR1 |
| 共通IC编号 | K4H511638F-HIB3000 |
产品详情
| 脚位/封装 | FBGA |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 2.5 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 7th Generation |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5DU5162EFR-J3I | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R16320F-6BI | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638F-HIB3T000 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638G-HIB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638G-HIB3TCV | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638J-BCIB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638J-BIB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638J-BPB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |