脚位/封装 | TSOP2(54) |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 3.3 V |
温度规格 | 0 C~+85 C |
速度 | 133 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 128M |
Bit Organization | x4 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 3rd Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bitsynchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle cont rol with the use of system cl ock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4S510432D-UC750CV | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432D-UC75T00 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432D-UC75TCV | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432D-UL75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432DTC750H | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432DTC750H0 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432DUC7500 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432M-EC75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432M-TC/TL 75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432M-TC75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |