K4S510432B-UC75

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4S510432B-UC75
厂牌 SAMSUNG/三星
IC 类别 SDRAM
IC代码 128MX4 SD

产品详情

脚位/封装 TSOP2(54)
外包装
无铅/环保 无铅/环保
电压(伏) 3.3 V
温度规格 0 C~+85 C
速度 133 MHZ
标准包装数量
标准外箱
Number Of Words 128M
Bit Organization x4
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal Power

GENERAL DESCRIPTION The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bitsynchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle cont rol with the use of system cl ock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

供应链有货

IC 编号 数量 生产年份
K4S510432B-UC75 5,500 索取报价
K4S510432B-UC75 1,003 索取报价
K4S510432B-UC75 15,000 09+ 索取报价
K4S510432B-UC75 10,000 09+ 索取报价
K4S510432B-UC75 8,564 09+ 索取报价
K4S510432B-UC75 1,961 2007+ 索取报价
K4S510432B-UC75 2,855 2006+ 索取报价
K4S510432B-UC75 13,500 索取报价
K4S510432B-UC75 8,564 索取报价

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
EDS5104ABATA75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-7 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-75-E TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA-A75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA075 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ABTA7A TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5104ADTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S510432B-CL75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S510432B-TC75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C