K4S510432B-UC75
產品詳情
| 脚位/封装 | TSOP2(54) |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 3.3 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 133 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 128M |
| Bit Organization | x4 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 3rd Generation |
| Power | Normal Power |
GENERAL DESCRIPTION The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bitsynchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle cont rol with the use of system cl ock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EDS5104ABATA75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| EDS5104ABTA-7 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| EDS5104ABTA-75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| EDS5104ABTA-75-E | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| EDS5104ABTA-A75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| EDS5104ABTA075 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| EDS5104ABTA7A | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| EDS5104ADTA-75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| K4S510432B-CL75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
| K4S510432B-TC75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |