脚位/封装 | TSOP2(54) |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 3.3 V |
溫度規格 | 0 C~+85 C |
速度 | 133 MHZ |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 128M |
Bit Organization | x4 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 3rd Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bitsynchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle cont rol with the use of system cl ock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
K4S510432M-TC75000 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432M-TL75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S510432MTC7500 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+85 C |