Package |
TSOP2(54)
|
Outpack |
|
RoHS |
RoHS
|
Voltage |
3.3 V
|
Temperature |
0 C~+85 C
|
Speed |
133 MHZ
|
Std. Pack Qty |
|
Std. Carton |
|
Number Of Words |
128M
|
Bit Organization |
x4
|
Density |
512M
|
Internal Banks |
4 Banks
|
Generation |
3rd Generation
|
Power |
Normal Power
|
GENERAL DESCRIPTION
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bitsynchronous high data rate Dynamic RAM organized as 4 x
33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor-
mance CMOS technology. Synchronous design allows precise cycle cont rol with the use of system cl ock I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to
be useful for a variety of high bandwidth, high performance memory system applications.