K4S643232H-TC55
产品详情
| 脚位/封装 | TSOP2(86) |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 183 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4S643232C-TC/L55 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232C-TC55T00 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232C-TL55 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232CTC-55 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232CTC-55T00 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232CTC55T | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232CTC55T00 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232D-TC55 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232E-TC55T00 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |
| K4S643232E-TL55 | TSOP2(86) | 3.3 V | 183 MHZ | 0 C~+85 C |