K4S643232H-TC55

Product Overview

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Manufacturer Part No K4S643232H-TC55
Brand SAMSUNG
Item SDRAM
Part No 2MX32 SD

Product Details

Package TSOP2(86)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 183 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Available Offers

Description Qty Datecode
K4S643232H-TC55 7,000 2009+ Get Quote
K4S643232H-TC55 2,548 2007+ Get Quote
K4S643232H-TC55 6,000 Get Quote
K4S643232H-TC55 7,000 Get Quote
K4S643232H-TC55 12,000 Get Quote
K4S643232H-TC55 10,000 Get Quote
K4S643232H-TC55 960 2005+ Get Quote
K4S643232H-TC55 5,000 2004+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S643232C-TC/L55 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232C-TC55T00 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232C-TL55 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232CTC-55 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232CTC-55T00 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232CTC55T TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232CTC55T00 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232D-TC55 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232E-TC55T00 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C
K4S643232E-TL55 TSOP2(86) 3.3 V 183 MHZ 0 C~+85 C