脚位/封装 | TSOP2(86) |
外包装 | |
无铅/环保 | 含铅 |
电压(伏) | 3.3 V |
温度规格 | 0 C~+85 C |
速度 | 133 MHZ |
标准包装数量 | |
标准外箱 | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4S643232H-TC75 | 676 | 索取报价 | |
K4S643232H-TC75 | 676 | 04+ | 索取报价 |
K4S643232H-TC75 | 6,000 | 索取报价 | |
K4S643232H-TC75 | 2,500 | 2005 | 索取报价 |
K4S643232H-TC75 | 10,000 | 索取报价 | |
K4S643232H-TC75 | 0 | 索取报价 | |
K4S643232H-TC75 | 50,000 | 索取报价 | |
K4S643232H-TC75 | 20,000 | 2004+ | 索取报价 |
K4S643232H-TC75 | 5,000 | 2004+ | 索取报价 |
K4S643232H-TC75 | 6,300 | 2002+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
K4S643232C-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232C-TC750000 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232CTC75T | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232D-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232D-TL75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232E-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232E-TC750000 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232E-TC75T00 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232F-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232F-UC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |