| 脚位/封装 |
TSOP2(86)
|
| 外包装 |
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
3.3 V
|
| 温度规格 |
0 C~+85 C
|
| 速度 |
60 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
2M
|
| Bit Organization |
x32
|
| Density |
64M
|
| Internal Banks |
4 Banks
|
| Generation |
9th Generation
|
| Power |
Normal Power
|
GENERAL DESCRIPTION
The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated
with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable
latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
