K4T1G164QE-HCE7/E6
产品概述
图片仅供参考
| 制造商IC编号 | K4T1G164QE-HCE7/E6 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 64MX16 DDR2 |
产品详情
| 脚位/封装 | FBGA-84 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 667 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HYB18TC1G160CF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640A-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3DB | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3DBLT | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640BL-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640C-3DB | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640C-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G1640AZCE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |