图片仅供参考
制造商IC编号 | K4T1G164QJ-BIE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX16 DDR2 |
共通IC编号 | K4T1G164QJ-BIE6000 |
脚位/封装 | FBGA-84 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | -40 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 11th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G164QJ-BIE6 | 10,000 | 索取报价 | |
K4T1G164QJ-BIE6000 | 46 | 索取报价 | |
K4T1G164QJ-BIE6000 | 1,326 | 索取报价 | |
K4T1G164QJ-BIE6000 | 50,000 | 索取报价 | |
K4T1G164QJ-BIE6000 | 8,097 | 索取报价 | |
K4T1G164QJ-BIE6 | 10,240 | 索取报价 | |
K4T1G164QJ-BIE6000 | 10,240 | 16+ | 索取报价 |
K4T1G164QJ-BIE6000 | 0 | 索取报价 | |
K4T1G164QJ-BIE6 | 14,080 | 索取报价 | |
K4T1G164QJ-BIE6000 | 7,095 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H64M16HR-3 IT:H TR-XYZ | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-3 IT:H/MT47H64M16 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-3 IT:H/MT47H64M17 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-3/3IT:E | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-37E IT TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-37EIT | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-37EIT:E | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-37EITE | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-3:E/-3IT:H | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H64M16HR-3:IT H | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |