图片仅供参考
制造商IC编号 | K4T1G164QQ-HCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX16 DDR2 |
共通IC编号 | K4T1G164QQ-HCE60 |
K4T1G164QQ-HCE600 | |
K4T1G164QQ-HCE6000 | |
K4T1G164QQ-HCE60JR | |
K4T1G164QQ-HCE6T | |
K4T1G164QQ-HCE6T00 | |
K4T1G164QQ-HCE6T000 |
脚位/封装 | FBGA-84 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G164QQ-HCE6 | 446 | 10+ | 索取报价 |
K4T1G164QQ-HCE6 | 4,000 | 索取报价 | |
K4T1G164QQ-HCE6 | 1,016 | 08+ | 索取报价 |
K4T1G164QQ-HCE6 | 7,840 | 0922+10+ | 索取报价 |
K4T1G164QQ-HCE6 | 966 | 10+ | 索取报价 |
K4T1G164QQ-HCE6 | 8 | 索取报价 | |
K4T1G164QQ-HCE6 | 248 | 索取报价 | |
K4T1G164QQ-HCE6 | 12,500 | 索取报价 | |
K4T1G164QQ-HCE6 | 11,350 | 16+ | 索取报价 |
K4T1G164QQ-HCE6 | 8,960 | 2010+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H64M16HR3:G(:H) | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR3L:H(:E) | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW 3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37E:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3: H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:E TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |