K4T1G164QQ-HCE6
产品概述
图片仅供参考
| 制造商IC编号 | K4T1G164QQ-HCE6 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 64MX16 DDR2 |
| 共通IC编号 | K4T1G164QQ-HCE60 |
| K4T1G164QQ-HCE600 | |
| K4T1G164QQ-HCE6000 | |
| K4T1G164QQ-HCE60JR | |
| K4T1G164QQ-HCE6T | |
| K4T1G164QQ-HCE6T00 | |
| K4T1G164QQ-HCE6T000 |
产品详情
| 脚位/封装 | FBGA-84 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 667 MBPS |
| 标准包装数量 | 1280 |
| 标准外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 17th Generation |
| Power | Normal Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4T1G164QQ-HCE6 | 7,840 | 2008+ | 索取报价 |
| K4T1G164QQ-HCE6000 | 120 | 索取报价 | |
| K4T1G164QQ-HCE60JR | 300 | 索取报价 | |
| K4T1G164QQ-HCE6000 | 70 | 索取报价 | |
| K4T1G164QQ-HCE6000 | 56 | 索取报价 | |
| K4T1G164QQ-HCE6000 | 20,160 | 08+ | 索取报价 |
| K4T1G164QQ-HCE6 | 1,120 | 07+ | 索取报价 |
| K4T1G164QQ-HCE6 | 1,120 | 2007+ | 索取报价 |
| K4T1G164QQ-HCE6000 | 220 | 索取报价 | |
| K4T1G164QQ-HCE6000 | 69 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |