K4T1G164QQ-HCE6

Product Overview

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Manufacturer Part No K4T1G164QQ-HCE6
Brand SAMSUNG
Item DDR2 SDRAM
Part No 64MX16 DDR2
Alternate Names K4T1G164QQ-HCE60
K4T1G164QQ-HCE600
K4T1G164QQ-HCE6000
K4T1G164QQ-HCE60JR
K4T1G164QQ-HCE6T
K4T1G164QQ-HCE6T00
K4T1G164QQ-HCE6T000

Product Details

Package FBGA-84
Outpack TRAY
RoHS RoHS
Voltage 1.8 V
Temperature 0 C~+85 C
Speed 667 MBPS
Std. Pack Qty 1280
Std. Carton
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 17th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4T1G164QQ-HCE6 7,840 2008+ Get Quote
K4T1G164QQ-HCE6000 120 Get Quote
K4T1G164QQ-HCE60JR 300 Get Quote
K4T1G164QQ-HCE6000 70 Get Quote
K4T1G164QQ-HCE6000 56 Get Quote
K4T1G164QQ-HCE6000 20,160 08+ Get Quote
K4T1G164QQ-HCE6 1,120 07+ Get Quote
K4T1G164QQ-HCE6 1,120 2007+ Get Quote
K4T1G164QQ-HCE6000 220 Get Quote
K4T1G164QQ-HCE6000 69 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EM68C16CWQD-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68C16CWVB-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160BF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2C-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2F-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2FL-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160CF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC 1G160BF-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G1602F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G160C2F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C