圖片僅供參考
製造商IC編號 | K4T1G164QQ-HCE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 64MX16 DDR2 |
共通IC編號 | K4T1G164QQ-HCE60 |
K4T1G164QQ-HCE600 | |
K4T1G164QQ-HCE6000 | |
K4T1G164QQ-HCE60JR | |
K4T1G164QQ-HCE6T | |
K4T1G164QQ-HCE6T00 | |
K4T1G164QQ-HCE6T000 |
脚位/封装 | FBGA-84 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | 1280 |
標準外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4T1G164QQ-HCE6 | 7,840 | 2008+ | 索取報價 |
K4T1G164QQ-HCE6000 | 120 | 索取報價 | |
K4T1G164QQ-HCE60JR | 300 | 索取報價 | |
K4T1G164QQ-HCE6000 | 70 | 索取報價 | |
K4T1G164QQ-HCE6000 | 56 | 索取報價 | |
K4T1G164QQ-HCE6000 | 20,160 | 08+ | 索取報價 |
K4T1G164QQ-HCE6 | 1,120 | 07+ | 索取報價 |
K4T1G164QQ-HCE6 | 1,120 | 2007+ | 索取報價 |
K4T1G164QQ-HCE6000 | 220 | 索取報價 | |
K4T1G164QQ-HCE6000 | 69 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |