K4T51163QE-ZCE6

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4T51163QE-ZCE6
厂牌 SAMSUNG/三星
IC 类别 DDR2 SDRAM
IC代码 32MX16 DDR2
共通IC编号 K4T51163QE-ZCE60
K4T51163QE-ZCE6000
K4T51163QE-ZCE60000
K4T51163QE-ZCE60JR
K4T51163QE-ZCE60T00
K4T51163QE-ZCE6T
K4T51163QE-ZCE6T00

产品详情

脚位/封装 FBGA-84
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.8 V
温度规格 0 C~+85 C
速度 667 MBPS
标准包装数量 1280
标准外箱
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 6th Generation
Power Normal Power

供应链有货

IC 编号 数量 生产年份
K4T51163QE-ZCE6 595 201323+ 索取报价
K4T51163QE-ZCE6 12,500 索取报价
K4T51163QE-ZCE6 11,350 16+ 索取报价
K4T51163QE-ZCE6 190 索取报价
K4T51163QE-ZCE6 8,483 索取报价
K4T51163QE-ZCE6 2,425 索取报价
K4T51163QE-ZCE6 2,558 索取报价
K4T51163QE-ZCE6000 4,300 7 索取报价
K4T51163QE-ZCE6 1,600 8 索取报价
K4T51163QE-ZCE6 2,563 2008+ 索取报价

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
EM68B16CWPA-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWPA-3H 512MB DDR2 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWQC-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BEP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y5-C FBGA-84 1.8 V 667 MBPS 0 C~+85 C