图片仅供参考
制造商IC编号 | K4T51163QE-ZCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 32MX16 DDR2 |
共通IC编号 | K4T51163QE-ZCE60 |
K4T51163QE-ZCE6000 | |
K4T51163QE-ZCE60000 | |
K4T51163QE-ZCE60JR | |
K4T51163QE-ZCE60T00 | |
K4T51163QE-ZCE6T | |
K4T51163QE-ZCE6T00 |
脚位/封装 | FBGA-84 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T51163QE-ZCE6 | 595 | 201323+ | 索取报价 |
K4T51163QE-ZCE6 | 12,500 | 索取报价 | |
K4T51163QE-ZCE6 | 11,350 | 16+ | 索取报价 |
K4T51163QE-ZCE6 | 190 | 索取报价 | |
K4T51163QE-ZCE6 | 8,483 | 索取报价 | |
K4T51163QE-ZCE6 | 2,425 | 索取报价 | |
K4T51163QE-ZCE6 | 2,558 | 索取报价 | |
K4T51163QE-ZCE6000 | 4,300 | 7 | 索取报价 |
K4T51163QE-ZCE6 | 1,600 | 8 | 索取报价 |
K4T51163QE-ZCE6 | 2,563 | 2008+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
HY5PS121621LF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621LFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T5121600BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160AF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160AF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2C3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2F-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160BC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |