K4T51163QE-ZCE6

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T51163QE-ZCE6
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 32MX16 DDR2
Andere Bezeichnungen K4T51163QE-ZCE60
K4T51163QE-ZCE6000
K4T51163QE-ZCE60000
K4T51163QE-ZCE60JR
K4T51163QE-ZCE60T00
K4T51163QE-ZCE6T
K4T51163QE-ZCE6T00

Produktbeschreibung

Gehäuse FBGA-84
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 667 MBPS
Standard Stückzahl 1280
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 6th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T51163QE-ZCE6 595 201323+ Anfrage senden
K4T51163QE-ZCE6 12.500 Anfrage senden
K4T51163QE-ZCE6 11.350 16+ Anfrage senden
K4T51163QE-ZCE6 190 Anfrage senden
K4T51163QE-ZCE6 8.483 Anfrage senden
K4T51163QE-ZCE6 2.425 Anfrage senden
K4T51163QE-ZCE6 2.558 Anfrage senden
K4T51163QE-ZCE6000 4.300 7 Anfrage senden
K4T51163QE-ZCE6 1.600 8 Anfrage senden
K4T51163QE-ZCE6 2.563 2008+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
HY5PS121621LF-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621LFP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T5121600BF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160AF-3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160AF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160B2C3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160B2F-3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160B2F-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160B2FL-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T512160BC-3 TFBGA-84 1.8 V 667 MBPS 0 C~+85 C