图片仅供参考
制造商IC编号 | K4T51163QI-HCE7 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 32MX16 DDR2 |
共通IC编号 | K4T51163QI-HCE700 |
K4T51163QI-HCE7000 | |
K4T51163QI-HCE7T | |
K4T51163QI-HCE7T00 | |
K4T51163QIHCE70 |
脚位/封装 | FBGA-84 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 800 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T51163QI-HCE7 | 336 | 1037+ | 索取报价 |
K4T51163QI-HCE7 | 386 | 索取报价 | |
K4T51163QI-HCE7 | 2,363 | 1137+ | 索取报价 |
K4T51163QI-HCE7 | 1,849 | 1037+ | 索取报价 |
K4T51163QI-HCE7 | 963 | 12+ | 索取报价 |
K4T51163QI-HCE7 | 904 | 1028+ | 索取报价 |
K4T51163QI-HCE7 | 670 | 1043+ | 索取报价 |
K4T51163QI-HCE7 | 3,652 | 索取报价 | |
K4T51163QI-HCE7T | 1,405 | 索取报价 | |
K4T51163QI-HCE7 | 895 | 2014+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5PS5162KFR-S6C/RB | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
H5PS5162KFR-S6CR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HXB18T512160BF(L)-25D | TFBGA-84 | 1.8V | 800 MBPS | 0 C~+85 C |
HXB18T512160BF(L)-25E | TFBGA-84 | 1.8V | 800 MBPS | 0 C~+85 C |
HY5PS121621AF-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AF-S5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AF-S6 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AFP-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AFP-S5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AFP-S6 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |