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制造商IC编号 | K4T51163QN-BIE7 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 32MX16 DDR2 |
共通IC编号 | K4T51163QN-BIE70 |
K4T51163QN-BIE700 | |
K4T51163QN-BIE7000 | |
K4T51163QN-BIE70CV | |
K4T51163QN-BIE7T00 | |
K4T51163QN-BIE7TCV |
脚位/封装 | FBGA-84 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | -40 C~+85 C |
速度 | 800 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 14th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T51163QN-BIE7TCV | 60,000 | 索取报价 | |
K4T51163QN-BIE7TCV | 8,000 | 索取报价 | |
K4T51163QN-BIE7 | 1,280 | 索取报价 | |
K4T51163QN-BIE7 | 40,000 | 索取报价 | |
K4T51163QN-BIE7TCV | 50,000 | 索取报价 | |
K4T51163QN-BIE7 | 10,240 | 索取报价 | |
K4T51163QN-BIE7 | 6,000 | 索取报价 | |
K4T51163QN-BIE7 | 2,560 | 索取报价 | |
K4T51163QN-BIE7 | 12,800 | 索取报价 | |
K4T51163QN-BIE70 | 14,228 | 2017 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
EM68B16CWQD-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
EM68B16CWQH-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
EM68B16CWQK-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
H5PS5162FFR-Y5I OR H5PS5162GFR | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HXI18T512160BF(L)-25E | TFBGA-84 | 1.8V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-E3I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-S5I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-S6I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CLFP-E3I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CLFP-S5I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |