图片仅供参考
制造商IC编号 | K9F1G08U0E-BIB000 25 |
厂牌 | SAMSUNG/三星 |
IC 类别 | FLASH-NAND |
IC代码 | 128MX8 NAND SLC |
脚位/封装 | FBGA-63 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 2.7V~3.6V |
温度规格 | -40 C~+85 C |
速度 | 25 NS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Generation | 6th Generation |
Pre Prog Version | None |
Classification | SLC Normal |
Cust Bad Block | Include Bad Block |
Mode | Normal |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
TC58BVG0S3HBAI4JDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI4YCL | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02D5BAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02D5BAI4JAH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02D5BAI4YCJ | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02I5BAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4ABH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4ARH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |