MT4C1M16C3DJ-6MICRON
产品详情
| 脚位/封装 | SOJ-42 |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 5.0 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 60 NS |
| 标准包装数量 | |
| 标准外箱 |
GENERAL DESCRIPTION The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| MT4C1M16C3DJ-6MICRON | 22,000 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| AS4C1M16F-50/60/JC/JI | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| AS4C1M16F5-60JI | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| AS4C1M16F5-60JIN | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160BJ-6 HITACH | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160BJI-6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160BLJI-6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160CJI6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160CJI6Z | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160JI-6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160JI-60 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |