MT4C1M16C3DJ-6MICRON
Product Details
| Package | SOJ-42 |
| Outpack | |
| RoHS | Leaded |
| Voltage | 5.0 V |
| Temperature | -40 C~+85 C |
| Speed | 60 NS |
| Std. Pack Qty | |
| Std. Carton |
GENERAL DESCRIPTION The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| MT4C1M16C3DJ-6MICRON | 22,000 | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| AS4C1M16F-50/60/JC/JI | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| AS4C1M16F5-60JI | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| AS4C1M16F5-60JIN | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160BJ-6 HITACH | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160BJI-6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160BLJI-6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160CJI6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160CJI6Z | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160JI-6 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |
| HM5118160JI-60 | SOJ-42 | 5.0 V | 60 NS | -40 C~+85 C |