脚位/封装 | TSOP2(44/50) |
外包装 | |
无铅/环保 | 含铅 |
电压(伏) | 5.0 V |
温度规格 | 0 C~+70 C |
速度 | 50 NS |
标准包装数量 | |
标准外箱 |
GENERAL DESCRIPTION The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
AS4C1M16F5-50TC | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
GM71C16160BT-5 | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
GM71C16160CT-5 | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
GM71C18160CT-5 | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
GM71C18160CT-50 | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
HM5116160LTT5 | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
HM5118160LTT-5 | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
HM5118160TT-5 | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
MT4C1M16C3TG-5S | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |
MT4C1M16C3TG-5T | TSOP2(44/50) | 5.0 V | 50 NS | 0 C~+70 C |