MT4C1M16C3TG-6Z
产品详情
| 脚位/封装 | TSOP2(44/50) |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 5.0 V |
| 温度规格 | 0 C~+70 C |
| 速度 | 60 NS |
| 标准包装数量 | |
| 标准外箱 |
GENERAL DESCRIPTION The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| AS4C1M16F5-60TC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16F5-60TC X | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16F5-60TCTR | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| AS4C1M16FS-60TC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| GM71C16160 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| GM71C16160-6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| GM71C16160A6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| GM71C16160BT-6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| GM71C16160C1-6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
| GM71C16160CF6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |