脚位/封装 | TSOP2(44/50) |
外包裝 | |
無鉛/環保 | 含鉛 |
電壓(伏) | 5.0 V |
溫度規格 | 0 C~+70 C |
速度 | 60 NS |
標準包裝數量 | |
標準外箱 |
GENERAL DESCRIPTION The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
AS4C1M16F5-60TC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60TC X | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16F5-60TCTR | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
AS4C1M16FS-60TC | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
GM71C16160 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
GM71C16160-6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
GM71C16160A6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
GM71C16160BT-6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
GM71C16160C1-6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |
GM71C16160CF6 | TSOP2(44/50) | 5.0 V | 60 NS | 0 C~+70 C |