| IS42RM32400H-75BI |
ISSI/矽成 |
SDRAM MOBILE |
861
|
SDRAM MOBILE / 4MX32 SD / FBGA-90 / 133 MHZ / -40 C~+85 C / Leaded / 2.5 V / TRAY |
| IS45S16800E-7TLA1 |
ISSI/矽成 |
SDRAM |
8,101
|
SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS43R86400D-5BLI |
ISSI/矽成 |
DDR1 SDRAM |
7,338
|
DDR1 SDRAM / 64MX8 DDR1 / BGA-60 / 200 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / 1900 pcs |
| IS46LR32800H-6BLA1 |
ISSI/矽成 |
LPDDR1 MOBILE |
37,962
|
LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 240 pcs |
| IS43LR16400C-6BL |
ISSI/矽成 |
LPDDR1 MOBILE |
3,033
|
LPDDR1 MOBILE / 4MX16 LPDDR1 / FBGA-60 / 166 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY |
| IS41C16100C-50TLI |
ISSI/矽成 |
DRAM |
2,626
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 50 NS / -40 C~+85 C / RoHS / 5.0 V / TRAY / EOL / 1170 pcs |
| IS42VS16162J-10TLI |
ISSI/矽成 |
SDRAM |
4,140
|
SDRAM / 16MX16 SD / TSOP2(54) / -40 C~+95 C / RoHS / 1.8 V |
| IC43DR16640B-25DBL |
ISSI/矽成 |
DDR2 SDRAM |
37
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| M27C1001-10F1(ROHS) |
STM/意法半导体 |
EPROM |
5,692
|
EPROM / 27C010 / CDIP-28 / 100 NS / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 240 pcs 3.1 kg 55*9*7 cm |
| IS46TR16640BL-125JBLA1 |
ISSI/矽成 |
DDR3L SDRAM |
3
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1600 MBPS / -40 C~+85 C / RoHS / 1.35V / TRAY |
| IS46DR16320D-25DBA2 |
ISSI/矽成 |
DDR2 SDRAM |
147
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+105 C / RoHS / 1.8 V / TRAY / 2090 pcs |
| IS43TR16640B-15GBLI |
ISSI/矽成 |
DDR3 SDRAM |
6
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1333 MBPS / -40 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 1900 pcs |
| IS43LR16160G-6BL |
ISSI/矽成 |
LPDDR1 MOBILE |
49
|
LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 166 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY |
| AT25640AN-10SU-2.7 |
MICROCHIP/微芯 |
EEPROM |
2,100
|
EEPROM / AT25640 / SOIC-8 / 10 MHZ / -40 C~+85 C / RoHS / 2.7V-5.5V / TUBE / EOL / 100 pcs |
| IS46TR16640BL-107MBLA1 |
ISSI/矽成 |
DDR3L SDRAM |
10
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 MBPS / -40 C~+85 C / RoHS / 1.35V / TRAY |
| IS43TR16640ED-125KBLI |
ISSI/矽成 |
DDR3 SDRAM |
57
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1600 MBPS / -40 C~+85 C / RoHS / 1.5 V / TRAY |
| IS43LD16160B-25BLI |
ISSI/矽成 |
LPDDR2 MOBILE |
51
|
LPDDR2 MOBILE / 16MX16 LPDDR2 / FBGA-134 / 800 MBPS / -40 C~+85 C / RoHS / 1.2 V / TRAY |
| IS43LD16128B-25BL |
ISSI/矽成 |
LPDDR2 MOBILE |
249
|
LPDDR2 MOBILE / 128MX16 LPDDR2 / FBGA-134 / 800 MBPS / 0 C~+85 C / RoHS / 1.2 V / TRAY |
| M27C256B-45XF1(ROHS) |
STM/意法半导体 |
EPROM |
780
|
EPROM / 27C256 / CDIP-28 / 45 NS / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*7 cm |
| M27C1001-10C6(ROHS) |
STM/意法半导体 |
EPROM |
148
|
EPROM / 27C010 / PLCC-32 / 100 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / EOL / 320 pcs 0.7 kg 56*12*3 cm |
| M27C256-12C1(ROHS) |
STM/意法半导体 |
OTPROM |
96
|
OTPROM / 27C256 / PLCC-32 / 120 NS / 0 C~+70 C / RoHS / 5.0 V / EOL |
| LT1074CY # 35 |
ANALOG DEVICES/ADI/亞德諾 |
VOLTAGE SENSOR |
49
|
VOLTAGE SENSOR / LT1074 / Leaded |
| HFBR-1524 |
BROADCOM/博通 |
TRANSMITTER |
80
|
TRANSMITTER / HFBR-1524 / 60 MA / Leaded / 1.67 V |
| AD940 |
ANALOG DEVICES/ADI/亞德諾 |
ADC/DAC |
35
|
ADC/DAC / AD940 / 5-PIN / 20 KHZ / -40 C~+150 C / Leaded / 5.0 V |
| LT3505IDD |
ANALOG DEVICES/ADI/亞德諾 |
PMIC/POWER MANAGEMENT |
242
|
PMIC/POWER MANAGEMENT / LT3505 / DFN-8 / 1.2 A / -40 C~+125 C / Leaded / 0.78 V |