| DALE RH 25 / 33 |
VISHAY/威世 |
RESISTOR |
1,094
|
RESISTOR / RH25 / Leaded |
| TC554001AFI-70L |
TOSHIBA/東芝 |
SRAM |
4,340
|
SRAM / 512KX8 SRAM / SOP-32 / 70 NS / Leaded / 5.0 V |
| MTB10N40ET4 |
ON |
OTHER |
4,882
|
OTHER / 10N40 / Leaded |
| TC551001CFI-85L |
TOSHIBA/東芝 |
SRAM |
6,000
|
SRAM / 128KX8 SRAM / SOP-32 / 85 NS / -40 C~+85 C / Leaded / 5.0 V |
| SPF3165KRLRA |
MOTOROLA |
TRANSISTOR |
4,000
|
TRANSISTOR / SPF3165 / TO-92 / Leaded / TAPE ON REEL / 2000 pcs |
| M29F040B-70K6 |
MICRON/美光 |
FLASH-NOR |
7,576
|
FLASH-NOR / 29F040 / PLCC-32 / 70 NS / -40 C~+85 C / Leaded / 5.0 V / TUBE / 320 pcs |
| TLP181 |
TOSHIBA |
OPTOCOUPLER |
9,000
|
OPTOCOUPLER / TLP181 / Leaded |
| BSS101 |
INFINEON+CYPRESS/英飞凌 |
TRANSISTOR |
2,670
|
TRANSISTOR / BSS101 / Leaded |
| AM29LV800BB-70EI |
INFINEON+CYPRESS/英飞凌 |
FLASH-NOR |
12,288
|
FLASH-NOR / 29LV800 BOTTOM / TSOP-48 / 70 NS / -40 C~+85 C / Leaded / 3.3 V / TRAY / 480 pcs |
| RF1S740SM9AS |
L3HARRIS |
OTHER |
34,400
|
OTHER / 1S740 / Leaded |
| AM186ES-40KC/W |
AMD/超微 |
MICROPROCESSOR |
11,220
|
MICROPROCESSOR / 80C186 / PQFP-100 / 40 MHZ / 0 C~+100 C / Leaded / 3.0V~3.6V / TRAY / 330 pcs |
| IS42S32800B-6TL |
ISSI/矽成 |
SDRAM |
102
|
SDRAM / 8MX32 SD / TSOP2(86) / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs 2.0 kg 33*38*10 cm |
| IS42S16320F-5TL |
ISSI/矽成 |
SDRAM |
63
|
SDRAM / 32MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| IS46TR81280CL-107MBLA25 |
ISSI/矽成 |
DDR3 SDRAM |
3
|
DDR3 SDRAM / 128MX8 DDR3 / FBGA-78 / 1866 MBPS / -40 C~+105 C / RoHS / 1.5 V / TRAY |
| IS42S16320D-6BL |
ISSI/矽成 |
SDRAM |
1
|
SDRAM / 32MX16 SD / FBGA-54 / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs 2.0 kg 36*9*16* cm |
| IS46LD16640C-25BLA1 |
ISSI/矽成 |
LPDDR2 MOBILE |
10
|
LPDDR2 MOBILE / 64MX16 LPDDR2 / FBGA-134 / 800 MBPS / -40 C~+85 C / RoHS / 1.2/1.8V / TRAY |
| IS46LD32320C-25BLA1 |
ISSI/矽成 |
LPDDR2 MOBILE |
13
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / PBGA-168 / 800 MBPS / -40 C~+85 C / RoHS / 1.14V~1.95 / TRAY |
| IS43R86400F-5TLI |
ISSI/矽成 |
DDR1 SDRAM |
33
|
DDR1 SDRAM / 64MX8 DDR1 / TSOP2(66) / 200 MHZ / -40 C~+85 C / RoHS / 2.5 V |
| IS42SM32200M-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
567
|
SDRAM MOBILE / 2MX32 SD / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS43LR32200C-6BLI |
ISSI/矽成 |
LPDDR1 |
45
|
LPDDR1 / 2MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS42S32160F-6TLI |
ISSI/矽成 |
SDRAM |
18
|
SDRAM / 16MX32 SD / TSOP2(86) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| IS46LD32320C-25BLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
30
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / PBGA-168 / 800 MBPS / -40 C~+105 C / RoHS / 1.14V~1.95 / TRAY |
| IS49NLC18160-33BLI |
ISSI/矽成 |
RLDRAM2 |
22
|
RLDRAM2 / 16MX18 RLD2 / FBGA-144 / 300 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS45S16320F-7BLA1 |
ISSI/矽成 |
SDRAM |
3
|
SDRAM / 32MX16 SD / FBGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS46TR81280ED-125KBLA2 |
ISSI/矽成 |
DDR3 SDRAM |
4
|
DDR3 SDRAM / 128MX8 DDR3 / FBGA-78 / 1600 MBPS / -40 C~+105 C / RoHS / 1.5 V / TRAY |