| IS42S32160F-6BLI |
ISSI/矽成 |
SDRAM |
6
|
SDRAM / 16MX32 SD / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2400 pcs |
| IS49NLC18160-25WBLI |
ISSI/矽成 |
RLDRAM2 |
72
|
RLDRAM2 / 16MX18 RLD2 / WBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS45S16320D-6TLA2 |
ISSI/矽成 |
SDRAM |
78
|
SDRAM / 32MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| IS43DR16160A-37CBLI |
ISSI/矽成 |
DDR2 SDRAM |
9,136
|
DDR2 SDRAM / 16MX16 DDR2 / FBGA-84 / 533 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / 209 pcs |
| IS42SM32160E-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
49
|
SDRAM MOBILE / 16MX32 SD / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS46TR16640CL-107MBLA2 |
ISSI/矽成 |
DDR3L SDRAM |
7
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 MBPS / -40 C~+105 C / RoHS / 1.35 V / TRAY |
| IS42SM16320E-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
48
|
SDRAM MOBILE / 32MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 3480 pcs |
| IS46LR32320B-6BLA2 |
ISSI/矽成 |
LPDDR1 MOBILE |
358
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY |
| IS45VM32160E-6BLA2 |
ISSI/矽成 |
SDRAM MOBILE |
237
|
SDRAM MOBILE / 16MX32 SD / FBGA-90 / 166 MHZ / -40 C~+105 C / RoHS / 1.8 V / TRAY / 2400 pcs |
| IS42VM16160K-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
37
|
SDRAM MOBILE / 16MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 348 pcs |
| IS45S16320F-7TLA2 |
ISSI/矽成 |
SDRAM |
372
|
SDRAM / 32MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| IS46LD32800A-25BLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
4,215
|
LPDDR2 MOBILE / 8MX32 LPDDR2 / FBGA-134 / 800 MBPS / -40 C~+105 C / RoHS / 1.2 V / TRAY |
| IS49NLC18320-33WBL |
ISSI/矽成 |
RLDRAM2 |
547
|
RLDRAM2 / 32MX18 RLD2 / WBGA-144 / 300 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS43LR16200D-6BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
1,417
|
LPDDR1 MOBILE / 2MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS45S16100E-7BLA2 |
ISSI/矽成 |
SDRAM |
3,673
|
SDRAM / 1MX16 SD / FBGA-60 / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| IS49NLC96400-33WBL |
ISSI/矽成 |
RLDRAM2 |
409
|
RLDRAM2 / 64MX9 RLD2 / WBGA-144 / 300 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS42S16100F-6BLI |
ISSI/矽成 |
SDRAM |
855
|
SDRAM / 1MX16 SD / BGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2860 pcs |
| IS49NLC18320-25WBL |
ISSI/矽成 |
RLDRAM2 |
712
|
RLDRAM2 / 32MX18 RLD2 / WBGA-144 / 400 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS49NLC96400-25WBL |
ISSI/矽成 |
RLDRAM2 |
807
|
RLDRAM2 / 64MX9 RLD2 / WBGA-144 / 400 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS42S16100E-6TLI |
ISSI/矽成 |
SDRAM |
54
|
SDRAM / 1MX16 SD / TSOP2(50) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1170 pcs |
| IS46LD32160B-18BPLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
3,835
|
LPDDR2 MOBILE / 16MX32 LPDDR2 / FBGA-168 / 1066 MBPS / -40 C~+105 C / RoHS / 1.2 V / TRAY |
| IS46LD32800B-25BPLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
84
|
LPDDR2 MOBILE / 8MX32 LPDDR2 / FBGA-168 / 800 MBPS / -40 C~+105 C / RoHS / 1.2 V / TRAY |
| IS49NLS18160-25WBLI |
ISSI/矽成 |
RLDRAM2 |
37
|
RLDRAM2 / 16MX18 RLD2 / WBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 104 pcs |
| IS46LR16160H-5BLA2 |
ISSI/矽成 |
LPDDR1 MOBILE |
166
|
LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40 C~+105 C / RoHS / 1.8 V |
| IS46LD32320C-18BLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
88
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / PBGA-168 / 1066 MBPS / -40 C~+105 C / RoHS / 1.2 V / TRAY |