| IS43R86400D-5TL |
ISSI/矽成 |
DDR1 SDRAM |
673
|
DDR1 SDRAM / 64MX8 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 1080 pcs |
| IS42VM16320E-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
76
|
SDRAM MOBILE / 32MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 348 pcs |
| IS42S16320F-7TL |
ISSI/矽成 |
SDRAM |
690
|
SDRAM / 32MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| MBM29DL163BD-90PBT |
INFINEON+CYPRESS/英飞凌 |
FLASH-NOR |
13,905
|
FLASH-NOR / 29DL163 / FBGA-48 / 90 NS / -40 C~+85 C / Leaded / 3.3 V / TRAY |
| Q40.0000MA306 0T0 |
SEIKO EPSON |
QUARTZ |
937
|
QUARTZ / 0000MA306 / SMD-4 / 40 MHZ / -20 C~+70 C / RoHS / TAPE ON REEL / 1000 pcs |
| SFH6156-2V |
VISHAY/威世 |
OPTOCOUPLER |
12
|
OPTOCOUPLER / SFH6156 / SMD-4 / 400 MV / -55 C~+100 C / RoHS / 70V |
| SFH6156-3T |
VISHAY/威世 |
OPTOCOUPLER |
866
|
OPTOCOUPLER / SFH6156 / SMD-4 / 400 MV / -55 C~+100 C / RoHS / 70V |
| SN7406DR |
TEXAS/TI/德仪 |
DRIVERS |
891
|
DRIVERS / SN7406 / SOIC-14 / 40 MA / 0 C~+70 C / RoHS / 5.0 V |
| IS61WV25616BLL-10BLI |
ISSI/矽成 |
SRAM-ASYNC |
30
|
SRAM-ASYNC / 256KX16 ASYNC / MBGA-48 / 10 NS / -40 C~+85 C / RoHS / 2.4V~3.6V / TRAY / 4800 pcs |
| IS42S86400B-7TL |
ISSI/矽成 |
SDRAM |
1,183
|
SDRAM / 64MX8 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| PCF8574T |
NXP/恩智浦 |
INTERFACE |
500
|
INTERFACE / PCF8574 / SO-16 / 100 KHZ / -40 C~+85 C / RoHS / 2.5V-6.0V |
| K4M51323PI-HG75000 |
SAMSUNG/三星 |
SDRAM MOBILE |
133,170
|
SDRAM MOBILE / 16MX32 SD / FBGA-90 / 133 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs 2.4 kg 38*19*11 cm |
| MT4C1M16C3TG-6 |
MICRON/美光 |
DRAM |
9,309
|
DRAM / 1MX16 FP / TSOP2(44/50) / 60 NS / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL / EOL / 1000 pcs 1.6 kg 37*35*8 cm |
| TC58MBM82F1XGI1 |
KIOXIA/鎧俠 |
FLASH-NAND |
54,367
|
FLASH-NAND / 32MB DOC / FBGA-85 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| IC66LV20016L-70B |
ISSI/矽成 |
SRAM-PSEUDO |
15
|
SRAM-PSEUDO / 2MX16 PSEUDO / BGA-48 / Leaded / 3.3 V / EOL |
| IS49RL18320-093EBL |
ISSI/矽成 |
RLDRAM3 |
37
|
RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 2133 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY |
| IS49RL18320-125BL |
ISSI/矽成 |
RLDRAM3 |
283
|
RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / 119 pcs |
| IS49RL18320-107EBL |
ISSI/矽成 |
RLDRAM3 |
355
|
RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / 119 pcs |
| IS49RL18320-125EBL |
ISSI/矽成 |
RLDRAM3 |
498
|
RLDRAM3 / 32MX18 RLD3 / FBGA-168 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY / 119 pcs |
| SFEM016GB1ED1WD-I-5E-111-HZ |
SWISSBIT |
FLASH-EMMC |
8
|
FLASH-EMMC / 16GB EMMC / BGA-153 / 200 MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V |
| IS42S16100E-7TLI |
ISSI/矽成 |
SDRAM |
1,530
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1170 pcs 2.0 kg 6*34*36* cm |
| UPD720101F1-EA8 |
RENESAS/瑞萨 |
CONTROLLER |
390
|
CONTROLLER / UPD720101 / FBGA-144 / 480 MBPS / -65 C~+150 C / RoHS / 3.0V~3.6V / TRAY / EOL / 800 pcs |
| LY62256SL-55LLI |
LYONTEK/來揚 |
SRAM-ASYNC |
40
|
SRAM-ASYNC / 32KX8 ASYNC / SOP-28 / 55 NS / -40 C~+85 C / RoHS / 2.7V~5.5V / TRAY / 2500 pcs |
| M29F040B-90N6 |
STM/意法半导体 |
FLASH-NOR |
1,668
|
FLASH-NOR / 29F040 / TSOP-32 / 90 NS / -40 C~+85 C / Leaded / 5.0 V / TRAY |
| IS43LD32160A-3BL |
ISSI/矽成 |
LPDDR2 MOBILE |
3,921
|
LPDDR2 MOBILE / 16MX32 LPDDR2 / FBGA-134 / 667 MBPS / 0 C~+85 C / RoHS / 1.2 V / TRAY |