| LM217MDT-TR |
STM/意法半导体 |
VOLTAGE REGULATOR |
359
|
VOLTAGE REGULATOR / LM217 / TO-220-3 / 1.5 A / -25 C~+125 C / RoHS / 1.2V~37V / TAPE ON REEL |
| DM5496J-MIL |
TEXAS/TI/德仪 |
TTL |
493
|
TTL / DM5496 / PDIP-16 / Leaded |
| AD7510DIJD |
ANALOG DEVICES/ADI/亞德諾 |
ANALOG SWITCH |
30
|
ANALOG SWITCH / AD7510 / PDIP-16 / 0 C~+70 C / Leaded |
| AD7510DIJN |
ANALOG DEVICES/ADI/亞德諾 |
ANALOG SWITCH |
150
|
ANALOG SWITCH / AD7510 / PDIP-16 / 0 C~+70 C / Leaded |
| ADUC812XS |
ANALOG DEVICES/ADI/亞德諾 |
ADC/DAC |
9
|
ADC/DAC / ADUC812 / QFP-44 / 400 KHZ / -40 C~+85 C / Leaded / 3.0V/5.0V |
| CD4051BE |
ANY |
INTERFACE |
480
|
INTERFACE / CD4051 / DIP / Leaded |
| CS8900A-IQ3Z |
|
CPLD |
68
|
CPLD / CS8900 / Leaded |
| LT1615ES5TR |
ANALOG DEVICES/ADI/亞德諾 |
DC2DC |
100
|
DC2DC / LT1615 / SOT-23-5 / 300 MA / 0 C~+70 C / Leaded / 1.23 V / TAPE ON REEL |
| TC554001AFI7L |
TOSHIBA/東芝 |
SRAM |
40
|
SRAM / 512KX8 SRAM / SOP-32 / 70 NS / Leaded / 5.0 V |
| TC 551001 CFI 70 L ( STANGE |
TOSHIBA/東芝 |
SRAM |
661
|
SRAM / 128KX8 SRAM / SOP-32 / 70 NS / -40 C~+85 C / Leaded / 5.0 V |
| IS42VM32200M-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
37
|
SDRAM MOBILE / 2MX32 SD / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43TR85120BL-107MBLI |
ISSI/矽成 |
DDR3L SDRAM |
6
|
DDR3L SDRAM / 512MX8 DDR3 / BGA-78 / 1866 MBPS / -40 C~+85 C / RoHS / 1.35V/1.5V / TRAY / 242 pcs |
| IS45S16100H-6BLA2 |
ISSI/矽成 |
SDRAM |
6
|
SDRAM / 1MX16 SD / FBGA-60 / 166 MHZ / -40 C~+105 C / RoHS / 3.3 V / EOL |
| IS46LD16640C-18BLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
87
|
LPDDR2 MOBILE / 64MX16 LPDDR2 / FBGA-134 / 1066 MBPS / -40 C~+105 C / RoHS / 1.2/1.8V / TRAY |
| IS46LD16640C-18BLA25 |
ISSI/矽成 |
LPDDR2 SDRAM |
18
|
LPDDR2 SDRAM / 64MX16 LPDDR2 / FBGA-134 / 1066 MBPS / -40 C~+105 C / RoHS / 1.2/1.8V |
| IS42S16320D-6BLI |
ISSI/矽成 |
SDRAM |
54
|
SDRAM / 32MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs 2.0 kg 36*9*16* cm |
| IS45S16320D-6CTLA1 |
ISSI/矽成 |
SDRAM |
180
|
SDRAM / 32MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS46TR16640CL-107MBLA3 |
ISSI/矽成 |
DDR3L SDRAM |
79
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 MBPS / -40 C~+125 C / RoHS / 1.35V / TRAY |
| IS42R16320D-6BLI |
ISSI/矽成 |
SDRAM |
147
|
SDRAM / 32MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / 2400 pcs |
| IS42VM16400M-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
1
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS42VM16800H-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
433
|
SDRAM MOBILE / 8MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43TR16640CL-107MBLI |
ISSI/矽成 |
DDR3L SDRAM |
48
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 MBPS / -40 C~+85 C / RoHS / 1.35V / TRAY / 242 pcs |
| IS49NLC36160-25EWBLI |
ISSI/矽成 |
RLDRAM2 |
522
|
RLDRAM2 / 16MX36 RLD2 / FBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS43LD32800B-18BPLI |
ISSI/矽成 |
LPDDR2 MOBILE |
54
|
LPDDR2 MOBILE / 8MX32 LPDDR2 / FBGA-168 / 1066 MBPS / -40 C~+85 C / RoHS / 1.14V~1.95 |
| IS42SM16160K-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
432
|
SDRAM MOBILE / 16MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 348 pcs |