| 3005378 STC |
STC/宏晶 |
|
10,000
|
3005378 / RoHS / 5000 pcs |
| STTH8L06D |
STM/意法半导体 |
RECTIFIER |
62,000
|
RECTIFIER / 8L06 / TO-220AC-2 / 8 A / -40 C~+175 C / RoHS / 600 V / TUBE / 1000 pcs |
| SM4004 |
DIOTEC |
DIODE |
110,000
|
DIODE / SM4004 / DO-213AB / 1 A / -55 C~+175 C / RoHS / 400 V / TAPE ON REEL / 5000 pcs |
| K4T51163QN-BCE7000 |
SAMSUNG/三星 |
DDR2 SDRAM |
1,911
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| TS924IYPT |
STM/意法半导体 |
OP AMPS |
32,500
|
OP AMPS / TS924 / TSSOP-14 / 4 MHZ / -40 C~+125 C / RoHS / 2.7V~12V / TAPE ON REEL / 2500 pcs |
| BFP420H6327 |
INFINEON+CYPRESS/英飞凌 |
TRANSISTOR |
9,000
|
TRANSISTOR / BFP420 / SOT-343-4 / 25 GHZ / -65 C~+150 C / RoHS / 5.0 V / TAPE ON REEL / 3000 pcs |
| 1,5KE27A |
STM/意法半导体 |
DIODE |
43,800
|
DIODE / 15KE27 / DO-201-2 / 1500 W / -55 C~+175 C / RoHS / 23.1 V / TAPE ON REEL / 1200 pcs |
| BZW50-27 |
STM/意法半导体 |
DIODE |
14,800
|
DIODE / BZW50 / THROUGH HOLE / 1 MHZ / -65 C~+175 C / RoHS / 27 V / TAPE ON REEL / 100 pcs |
| IS46DR16640B-25DBLA2 |
ISSI/矽成 |
DDR2 SDRAM |
3,301
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+105 C / RoHS / 1.8 V / TRAY / 209 pcs |
| IS45S16160D-75ETLA1 |
ISSI/矽成 |
SDRAM |
60,415
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| 27C256-12P |
MICROCHIP/微芯 |
EPROM |
352
|
EPROM / 27C256 / DIP-28 / 120 NS / 0 C~+70 C / Leaded / 5.0 V |
| S34ML08G101TFA003 |
SKYHIGH |
FLASH-NAND |
5,000
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1000 pcs |
| IS49NLS18320A-18WBL |
ISSI/矽成 |
RLDRAM2 |
3,177
|
RLDRAM2 / 32MX18 RLD2 / WBGA-144 / 533 MHZ / 0 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 104 pcs |
| M12L64322A-6TIG |
ESMT/EMP/晶豪 |
SDRAM |
843
|
SDRAM / 2MX32 SD / TSOP2(86) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| M27C801-100K1 (ROHS) |
STM/意法半导体 |
OTPROM |
4,752
|
OTPROM / 27C080 / PLCC-32 / 80 MHZ / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 320 pcs |
| IS42S16160D-7BLI |
ISSI/矽成 |
SDRAM |
3,397
|
SDRAM / 16MX16 SD / BGA-54 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs 2.0 kg 37*16*9 cm |
| IS42S32400F-7BLI |
ISSI/矽成 |
SDRAM |
448
|
SDRAM / 4MX32 SD / TFBGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 4800 pcs 2.0 kg 37*16*9 cm |
| IS61LV6416-10BLI |
ISSI/矽成 |
SRAM-ASYNC |
1,365
|
SRAM-ASYNC / 64KX16 ASYNC / BGA-48 / 10 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 4800 pcs 2.0 kg 16*9*18 cm |
| S34MS01G200TFI900 |
SKYHIGH |
FLASH-NAND |
2,718
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 45 NS / -40 C~+85 C / RoHS / 1.8 V / TRAY / 960 pcs |
| S34ML16G303TFV000 |
SKYHIGH |
FLASH-NAND |
2,037
|
FLASH-NAND / 2GX8 NAND SLC / TSOP-48 / 45 NS / -40 C~+105 C / RoHS / 3.3 V / TRAY / EOL |
| S34ML08G301BHI100 |
SKYHIGH |
FLASH-NAND |
2,814
|
FLASH-NAND / 1GX8 NAND SLC / BGA-63 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2100 pcs |
| S34ML08G101BHB000 |
SKYHIGH |
FLASH-NAND |
1,433
|
FLASH-NAND / 1GX8 NAND SLC / BGA-63 / 25 NS / -40 C~+105 C / RoHS / 3.3 V / TRAY / 960 pcs |
| M27C512-45XF1 |
STM/意法半导体 |
EPROM |
4,784
|
EPROM / 27C512 / CDIP-28 / 45 NS / 0 C~+70 C / Leaded / 5.0 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*8 cm |
| IS43R16160D-6BI |
ISSI/矽成 |
DDR1 SDRAM |
6,844
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / Leaded / 2.5 V / TRAY / 1900 pcs |
| IS42SM16800H-6BI |
ISSI/矽成 |
SDRAM MOBILE |
3,111
|
SDRAM MOBILE / 8MX16 SD / BGA-54 / 166 MHZ / -40 C~+85 C / Leaded / 3.3 V / TRAY |