IC 編號 | 廠牌 | IC 類別 | 數量 | 備忘錄 |
---|---|---|---|---|
IS43LD32800B-25BPLI | ISSI/矽成 | LPDDR2 SDRAM | 5,157 | LPDDR2 SDRAM / 8MX32 LPDDR2 / FBGA-168 / 800 MBPS / -40 C~+85 C / RoHS / 1.14V~1.95 / TRAY |
IS41C16105C-50TLI | ISSI/矽成 | DRAM | 357 | DRAM / 1MX16 FP / TSOP2(44/50) / 50 NS / -40 C~+85 C / RoHS / 5.0 V / TRAY / EOL / 117 pcs |
IS41C16100C-50TLI | ISSI/矽成 | DRAM | 2,626 | DRAM / 1MX16 EDO / TSOP2(44/50) / 50 NS / -40 C~+85 C / RoHS / 5.0 V / TRAY / EOL / 1170 pcs |
IS46LR16400C-XBLA2-AS | ISSI/矽成 | DDR1L MOBILE | 112,414 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40 C~+105 C / RoHS / 1.8 V |
IS42VS16162J-10TLI | ISSI/矽成 | SDRAM | 4,140 | SDRAM / 16MX16 SD / TSOP2(54) / -40 C~+95 C / RoHS / 1.8 V |
IS49RL36160-125FBL | ISSI/矽成 | RLDRAM3 | 7 | RLDRAM3 / 16MX36 RLD3 / FBGA-168 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY |
IS42S16160D-7BL | ISSI/矽成 | SDRAM | 1,542 | SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs 2.0 kg 32*36*9* cm |
IC43DR16640B-25DBL | ISSI/矽成 | DDR2 SDRAM | 37 | DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
IC43DR16320D-25DBL | ISSI/矽成 | DDR2 SDRAM | 28,158 | DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
M27C1001-10F1(ROHS) | STM/意法半导体 | EPROM | 5,692 | EPROM / 27C010 / CDIP-28 / 100 NS / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 240 pcs 3.1 kg 55*9*7 cm |
IS46TR16640BL-125JBLA1 | ISSI/矽成 | DDR3L SDRAM | 3 | DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1600 MBPS / -40 C~+85 C / RoHS / 1.35V / TRAY |
IS46DR16320D-25DBA2 | ISSI/矽成 | DDR2 SDRAM | 147 | DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+105 C / Leaded / 1.8 V / TRAY |
IS43TR16640B-15GBLI | ISSI/矽成 | DDR3 SDRAM | 6 | DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1333 MBPS / -40 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 1900 pcs |
IS43LR16160G-6BL | ISSI/矽成 | LPDDR1 | 49 | LPDDR1 / 16MX16 LPDDR1 / FBGA-60 / 166 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY |
IS43DR16320D-25DBI | ISSI/矽成 | DDR2 SDRAM | 3,064 | DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+85 C / Leaded / 1.8 V / TRAY / 2090 pcs 36*9*15 cm |
AT25640AN-10SU-2.7 | MICROCHIP/微芯 | EEPROM | 2,100 | EEPROM / AT25640 / SOIC-8 / 10 MHZ / -40 C~+85 C / RoHS / 2.7V-5.5V / TUBE / EOL / 100 pcs |
IS46TR16640BL-107MBLA1 | ISSI/矽成 | DDR3L SDRAM | 10 | DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 MBPS / -40 C~+85 C / RoHS / 1.35V / TRAY |
IS43TR16640ED-125KBLI | ISSI/矽成 | DDR3 SDRAM | 57 | DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1600 MBPS / -40 C~+85 C / RoHS / 1.5 V / TRAY |
IS43LD16160B-25BLI | ISSI/矽成 | LPDDR2 MOBILE | 51 | LPDDR2 MOBILE / 16MX16 LPDDR2 / FBGA-134 / 800 MBPS / -40 C~+85 C / RoHS / 1.2/1.8V / TRAY |
IS43LD16128B-25BL | ISSI/矽成 | LPDDR2 MOBILE | 249 | LPDDR2 MOBILE / 128MX16 LPDDR2 / FBGA-134 / 800 MBPS / 0 C~+85 C / RoHS / 1.2/1.8V / TRAY |
K4T51083QN-BCE7000 | SAMSUNG/三星 | DDR2 SDRAM | 35,778 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 MBPS / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
K4T1G084QJ-BIE7TCV | SAMSUNG/三星 | DDR2 SDRAM | 6,000 | DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TAPE ON REEL / EOL |
KLMBG4GESD-C02PT18 | SAMSUNG/三星 | FLASH-EMMC | 11,000 | FLASH-EMMC / 32GB EMMC / FBGA-100 / 52MHZ / -40 C~+85 C / RoHS / 1.8V/3.3V / TAPE ON REEL / 1000 pcs |
IS42S32160C-75BL | ISSI/矽成 | SDRAM | 11,571 | SDRAM / 16MX32 SD / FBGA-90 / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
M27C256B-45XF1(ROHS) | STM/意法半导体 | EPROM | 780 | EPROM / 27C256 / CDIP-28 / 45 NS / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*7 cm |