| M12L16161A-7BG2F |
ESMT/EMP/晶豪 |
SDRAM |
7,200
|
SDRAM / 1MX16 SD / FBGA-60 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2860 pcs |
| GLT441L16P-60J4 |
G-LINK |
DRAM |
5
|
DRAM / 256KX16 FP / SOJ-40 / 0 C~+70 C / RoHS / 3.3 V |
| AS4C256K16F0-60JC |
ALLIANCE-MEMORY |
DRAM |
5
|
DRAM / 256KX16 FP / SOJ-40 / 60 NS / 0 C~+70 C / Leaded / 5.0 V |
| MSM56V16160J-7T3KFG |
OKI |
SDRAM |
470
|
SDRAM / 1MX16 SD / TSOP2(50) / RoHS / 3.3 V / TRAY / 300 pcs |
| M12L128324A-7TIG |
ESMT/EMP/晶豪 |
SDRAM |
864
|
SDRAM / 4MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 788 pcs |
| IS43DR81280A-25DBLI |
ISSI/矽成 |
DDR2 SDRAM |
15
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 109 pcs 37*16*9 cm |
| IC42S16160-7TG |
ISSI/矽成 |
SDRAM |
2,250
|
SDRAM / 16MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / EOL |
| AS4C256K16E0-50TC |
ALLIANCE-MEMORY |
DRAM |
9,292
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 50 NS / 0 C~+70 C / Leaded / 5.0 V / TRAY / 1350 pcs |
| IS41LV16100S-50K |
ISSI/矽成 |
DRAM |
6,982
|
DRAM / 1MX16 EDO / SOJ-42 / 50 NS / 0 C~+70 C / Leaded / 3.3 V / TUBE / EOL / 1600 pcs |
| VG2617400DJ-6 |
VANGUARD |
DRAM |
400
|
DRAM / 4MX4 FP / SOJ-24/26 / 60 NS / 0 C~+70 C / Leaded / TUBE / 1000 pcs 1.64 kg 57*13*8 cm |
| UPD78063GC-536-7EA |
NEC |
MCU |
92
|
MCU / UPD78063 / Leaded |
| AT24C64W-10SI-1.8 |
MICROCHIP/微芯 |
EEPROM-2WIRE |
1,186
|
EEPROM-2WIRE / 24C64 / SOIC / 100 KHZ / -40 C~+85 C / Leaded / 1.8V~5.5V / TAPE ON REEL |
| K4H641638N-LCCC |
SAMSUNG/三星 |
DDR1 SDRAM |
510
|
DDR1 SDRAM / 4MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 960 pcs |
| A428316V-35F |
AMIC/聯笙 |
DRAM |
10,800
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 35 NS / 0 C~+70 C / RoHS / 5.0 V / TRAY / 1350 pcs 2.0 kg 37*16*9 cm |
| HY57V561620FTP-H-C |
SK HYNIX/海力士 |
SDRAM |
360
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.4 kg 37*10*17 cm |
| IS42S16400D-7TL |
ISSI/矽成 |
SDRAM |
60
|
SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| M12L128168A-6TG |
ESMT/EMP/晶豪 |
SDRAM |
1,080
|
SDRAM / 8MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / 1080 pcs 2.18 kg 37*16*9 cm |
| K4S641632H-UC75 |
SAMSUNG/三星 |
SDRAM |
24
|
SDRAM / 4MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.0 kg |
| K4S511632D-UC75 |
SAMSUNG/三星 |
SDRAM |
10
|
SDRAM / 32MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / EOL |
| HY57V643220DLTP-7I |
SK HYNIX/海力士 |
SDRAM |
7,770
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.4 kg 37*18*11 cm |
| GM71V16163CT-6DR |
SK HYNIX/海力士 |
DRAM |
20,000
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0 C~+70 C / Leaded / 3.3 V / TAPE ON REEL / 1000 pcs 1.4 kg 35*34*6 cm |
| M5M410092CFP-10/AZA7 |
RENESAS/瑞萨 |
3D-RAM |
900
|
3D-RAM / M5M410092 / FP-128 / Leaded / TRAY / 300 pcs 1.03 kg 36*16*6 cm |
| M5M4V16169DTP-8 |
MITSUBISHI/三菱 |
CACHED DRAM |
360
|
CACHED DRAM / 1MX16 CDRAM / TSOP / Leaded / TRAY / 360 pcs 1.06 kg 36*16*6 cm |
| IC41LV16100S-50TG |
ISSI/矽成 |
DRAM |
12,016
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 50 NS / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1170 pcs 2.0 kg 38*19*10 cm |
| K521H12ACE-B050T00 |
SAMSUNG/三星 |
MCP |
4,000
|
MCP / 1GB NAND+512M LPDDR1 / FBGA-107 / 5 NS / 0 C~+85 C / RoHS / 1.70-1.95V / TAPE ON REEL / 2000 pcs 1.11 kg 36*35*7 cm |