| TC110G08AT-0404 |
TOSHIBA |
CPU |
237
|
CPU / 110G08 / Leaded |
| HFA3783IN |
HARRIS/INTERSIL |
TELECOM CHIP |
450
|
TELECOM CHIP / HFA3783 / Leaded |
| K4S641633H-BN75000 |
SAMSUNG/三星 |
SDRAM MOBILE |
3,976
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25 C~+85 C / RoHS / 3.0V/3.3V / TRAY / 1280 pcs 2.4 kg 38*19*11 cm |
| K4S281632F-TC75000 |
SAMSUNG/三星 |
SDRAM |
503
|
SDRAM / 8MX16 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY / EOL |
| GM71C16400CJ-6T |
SK HYNIX/海力士 |
DRAM |
4,980
|
DRAM / 4MX4 FP / SOJ-24/26 / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL / 1000 pcs 1.72 kg 36*36*7 cm |
| GM71V17803CJ-6 |
SK HYNIX/海力士 |
DRAM |
3,000
|
DRAM / 2MX8 EDO / SOJ-28 / 60 NS / 0 C~+70 C / Leaded / 3.3 V / TUBE / EOL / 1000 pcs 1.92 kg 55*8*7 cm |
| IS42S32200B-7T |
ISSI/矽成 |
SDRAM |
3,750
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / Leaded / 3.3 V |
| GM71V16403CJ-5 |
SK HYNIX/海力士 |
DRAM |
1,000
|
DRAM / 4MX4 EDO / SOJ-24/26 / 50 NS / 0 C~+70 C / Leaded / 3.3 V / TUBE / EOL / 1000 pcs 1.74 kg 57*16*5 cm |
| K4E151612D-TC60T |
SAMSUNG/三星 |
DRAM |
1,000
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0 C~+85 C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 pcs 1.42 kg 36*35*7 cm |
| AS4LC256K32SO-133QC |
ALLIANCE-MEMORY |
SDRAM |
447
|
SDRAM / 256KX32 SD / Leaded / 3.3 V |
| K4M561633G-BN75 |
SAMSUNG/三星 |
SDRAM MOBILE |
10
|
SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -25 C~+85 C / RoHS / 3.0V/3.3V / TRAY / EOL / 1120 pcs 2.32 kg 38*19*11 cm |
| IS42S16800A-7T |
ISSI/矽成 |
SDRAM |
6,108
|
SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY / 1080 pcs |
| K4X1G323PC-8GC6000 |
SAMSUNG/三星 |
LPDDR1 MOBILE |
1,232
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 166 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs |
| K9KBG08U1M-HIB0000 |
SAMSUNG/三星 |
FLASH-NAND |
400
|
FLASH-NAND / 4GX8 NAND SLC / BGA / 1 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| MT48LC2M32B2TG55TR |
MICRON/美光 |
SDRAM |
85
|
SDRAM / 2MX32 SD / TSOP2(86) / 183 MHZ / 0 C~+70 C / Leaded / 3.3 V / TAPE ON REEL |
| K4E661612D-TP50 |
SAMSUNG/三星 |
DRAM |
31,809
|
DRAM / 4MX16 EDO / TSOP2(50) / 50 NS / -40 C~+85 C / Leaded / 3.3 V / TAPE ON REEL / 1000 pcs |
| M12L16161A-7BG2F |
ESMT/EMP/晶豪 |
SDRAM |
7,200
|
SDRAM / 1MX16 SD / FBGA-60 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2860 pcs |
| GLT441L16P-60J4 |
G-LINK |
DRAM |
5
|
DRAM / 256KX16 FP / SOJ-40 / 0 C~+70 C / RoHS / 3.3 V |
| AS4C256K16F0-60JC |
ALLIANCE-MEMORY |
DRAM |
5
|
DRAM / 256KX16 FP / SOJ-40 / 60 NS / 0 C~+70 C / Leaded / 5.0 V |
| MSM56V16160J-7T3KFG |
OKI |
SDRAM |
470
|
SDRAM / 1MX16 SD / TSOP2(50) / RoHS / 3.3 V / TRAY / 300 pcs |
| M12L128324A-7TIG |
ESMT/EMP/晶豪 |
SDRAM |
864
|
SDRAM / 4MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 788 pcs |
| IS43DR81280A-25DBLI |
ISSI/矽成 |
DDR2 SDRAM |
15
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 109 pcs 37*16*9 cm |
| IC42S16160-7TG |
ISSI/矽成 |
SDRAM |
2,250
|
SDRAM / 16MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / EOL |
| AS4C256K16E0-50TC |
ALLIANCE-MEMORY |
DRAM |
9,292
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 50 NS / 0 C~+70 C / Leaded / 5.0 V / TRAY / 1350 pcs |
| IS41LV16100S-50K |
ISSI/矽成 |
DRAM |
6,982
|
DRAM / 1MX16 EDO / SOJ-42 / 50 NS / 0 C~+70 C / Leaded / 3.3 V / TUBE / EOL / 1600 pcs |