H5TC4G63EFR-N0C

產品概述

IC Picture

圖片僅供參考

製造商IC編號 H5TC4G63EFR-N0C
廠牌 SK HYNIX/海力士
IC 類別 DDR3L SDRAM
IC代碼 256MX16 DDR3L
共通IC編號 H5TC4G63EFR-N0C D3 256X16

產品詳情

脚位/封装 FBGA-96
外包裝 TRAY
無鉛/環保 無鉛/環保
電壓(伏) 1.35V
溫度規格 0 C~+85 C
速度
標準包裝數量
標準外箱
Number Of Words 256M
Bit Organization x16
Density 4G
Operating Temperature commercial temperature(0°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 6th
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Description The H5TC4G63EFR-xxA a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.) SK hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

供應鏈有貨

IC 編號 數量 生產年份
H5TC4G63EFR-N0C 7,900 索取報價
H5TC4G63EFR-N0C 16,000 索取報價
H5TC4G63EFR-N0C 5,310 索取報價
H5TC4G63EFR-N0C 8,000 索取報價
H5TC4G63EFR-N0C D3 256X16 100,000 18+ 索取報價
H5TC4G63EFR-N0C 7,930 索取報價
H5TC4G63EFR-N0C 6,050 索取報價
H5TC4G63EFR-N0C 6,059 2016+ 索取報價
H5TC4G63EFR-N0C 7,200 16+ 索取報價
H5TC4G63EFR-N0C 6,050 2016+ 索取報價