脚位/封装 | TSOP2(86) |
外包裝 | TRAY |
無鉛/環保 | 含鉛 |
電壓(伏) | 3.3 V |
溫度規格 | 0 C~+70 C |
速度 | 166 MHZ |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Package Material | normal |
Interface | LVTTL |
Hynix Memory | HY |
No Of Banks | 4 banks |
Die Generation | 4th Gen. |
Power Consumption | low power |
Shipping Method | tray |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EM638325TS6-6G | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325TS6-6G DC:2010 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325TSA-6G | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325TSS-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325VF-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220(C)6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V6432200CT-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220BATC-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220BCT-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |