圖片僅供參考
| 製造商IC編號 | K4A8G165WC-BCTD |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR4 SDRAM |
| IC代碼 | 512MX16 DDR4 |
| 共通IC編號 | K4A8G165WC-BCTD0 |
| K4A8G165WC-BCTD000 | |
| K4A8G165WC-BCTD00P | |
| K4A8G165WC-BCTD0CV | |
| K4A8G165WC-BCTDT | |
| K4A8G165WC-BCTDT00 | |
| K4A8G165WC-BCTDTCT | |
| K4A8G165WC-BCTDTCV | |
| K4A8G165WC-BCTDTCVTR |
| 脚位/封装 | FBGA-96 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.2 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 2666 MBPS |
| 標準包裝數量 | 1120 |
| 標準外箱 | |
| Number Of Words | 512M |
| Bit Organization | x16 |
| Density | 8Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 4th Generation |
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4A8G165WC-BCTD | 20,160 | 索取報價 | |
| K4A8G165WC-BCTD000 | 0 | 25 | 索取報價 |
| K4A8G165WC-BCTD | 8,960 | 2025+ | 索取報價 |
| K4A8G165WC-BCTD | 3,838 | 2024+ | 索取報價 |
| K4A8G165WC-BCTD | 17,920 | 25+ | 索取報價 |
| K4A8G165WC-BCTD | 11,200 | 2023+ | 索取報價 |
| K4A8G165WC-BCTD | 8,960 | 索取報價 | |
| K4A8G165WC-BCTD | 4,000 | 2023+ | 索取報價 |
| K4A8G165WC-BCTD | 44,800 | 24+ | 索取報價 |
| K4A8G165WC-BCTD | 10,080 | 24+ | 索取報價 |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| MT40A512M16LY-075:E | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| H5AN8G6NAFR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKCTR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NCJR-VKIR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NDJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G6NJJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSAN8G6NCJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSAN8GENCJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSANAGBNCMR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |