圖片僅供參考
製造商IC編號 | K4B4G0846E-BYMA |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3L SDRAM |
IC代碼 | 512MX8 DDR3L |
共通IC編號 | K4B4G0846E- BYMATCV |
K4B4G0846E-BYMA0 | |
K4B4G0846E-BYMA000 | |
K4B4G0846E-BYMA0CV | |
K4B4G0846E-BYMAT00 |
脚位/封装 | FBGA-78 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.35V |
溫度規格 | 0 C~+85 C |
速度 | 1866 MBPS |
標準包裝數量 | 1280 |
標準外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4B4G0846E-BYMA | 12,800 | 索取報價 | |
K4B4G0846E-BYMA | 144 | 1743+ | 索取報價 |
K4B4G0846E-BYMA | 127 | 18+ | 索取報價 |
K4B4G0846E-BYMA | 10,240 | 23+ | 索取報價 |
K4B4G0846E-BYMA000 | 0 | 索取報價 | |
K4B4G0846E-BYMA | 11,200 | 索取報價 | |
K4B4G0846E-BYMA | 8,960 | 2022+ | 索取報價 |
K4B4G0846E-BYMA | 15,360 | 索取報價 | |
K4B4G0846E-BYMA | 3,840 | DC22+ | 索取報價 |
K4B4G0846E-BYMA | 1 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
H5TC4G83AFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDAR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83DFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |