K4B4G1646E-BY6MA
產品概述
圖片僅供參考
| 製造商IC編號 | K4B4G1646E-BY6MA |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 256MX16 DDR3L |
產品詳情
| 脚位/封装 | FBGA-96 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35 V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 6th Generation |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| H5TC4G63CFR-RDIR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+85 C |
| IS43TR16256AL-107MBLA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| IS43TR16256AL-107MBLI | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| IS43TR16256BL-107MBLA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| IS43TR16256BL-107MBLI | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| IS43TR16256ECL-107NBLA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| IS43TR16256ECL-107NBLI | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| IS46TR16256AL-107MBLA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| IS46TR16256AL-107MBLA1-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+85 C |
| MT41K256M16TTW-107AIT:P | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+85 C |