K4H511638J-BCIB3
產品概述
圖片僅供參考
| 製造商IC編號 | K4H511638J-BCIB3 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR1 SDRAM |
| IC代碼 | 32MX16 DDR1 |
產品詳情
| 脚位/封装 | FBGA |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 2.5 V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 166 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 11th Generation |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| H5DU5162EFR-J3I | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R16320F-6BI | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638F-HIB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638F-HIB3000 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638F-HIB3T000 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638G-HIB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638G-HIB3TCV | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638J-BIB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |
| K4H511638J-BPB3 | FBGA | 2.5 V | 166 MHZ | -40 C~+85 C |