K4T1G164QE-HPE6
產品概述
圖片僅供參考
| 製造商IC編號 | K4T1G164QE-HPE6 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR2 SDRAM |
| IC代碼 | 64MX16 DDR2 |
產品詳情
| 脚位/封装 | FBGA-84 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.8 V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 667 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Low Power |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| HY5PS1G1631CFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS1G1631CLFP-Y5I-C | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640A-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640A-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640BL-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640C-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |