圖片僅供參考
製造商IC編號 | K4T1G164QE-HPE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 64MX16 DDR2 |
脚位/封装 | FBGA-84 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | -40 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low Power |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
K4T1G164QA-ZPE6 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QF-BPE6 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QF-BPE60 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QF-BPE60000 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QF-BPE60CV | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QG-BIE6 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QG-BIE6000 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QG-BIE6T00 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QG-BIE6TCV | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T1G164QJ-BIE6 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |